Yes, but running out of RAM is impractical due to low memory bandwidth.
According to the article/Samsung RAM dies inside can support way higher bandwidth than they expose, they're limited by external interface / bus width:
> Together, they can utilize the chip’s internal bandwidth across all 16 banks, which comes out to 614 GB/s. For comparison, regular DRAM accesses can hit two banks in parallel and max out at 76.8 GB/s.
And that's just for single 64-bit IC. So way faster and more power efficient.
According to the article/Samsung RAM dies inside can support way higher bandwidth than they expose, they're limited by external interface / bus width:
> Together, they can utilize the chip’s internal bandwidth across all 16 banks, which comes out to 614 GB/s. For comparison, regular DRAM accesses can hit two banks in parallel and max out at 76.8 GB/s.
And that's just for single 64-bit IC. So way faster and more power efficient.