This is a bit confusing, as one of the special/unique properties of Graphene is that it doesn't have a bandgap.
If we're talking about core semiconductor applications, other 2D materials which have much larger bandgaps than the 0.6 eV reported in the paper, are much more favorable (specifically from TMD sub family, MoS2 for NMOS and WS2/WSe2 for PMOS).
If we're talking about core semiconductor applications, other 2D materials which have much larger bandgaps than the 0.6 eV reported in the paper, are much more favorable (specifically from TMD sub family, MoS2 for NMOS and WS2/WSe2 for PMOS).
This has been needlessly hyped, like this video...https://www.youtube.com/watch?v=gWUX2OTqkEo&ab_channel=Georg...
Graphene is better off for twisted bilayer superconductors, but this is much further down the road: https://crommie.berkeley.edu/research/tlbg/