To be clear these (Resistive RAM and Magnetic RAM) are really competitors to Flash (EPROM) rather than DRAM or 3D XPoint from Intel. Their main advantages are process simplification (Flash requires a LOT of extra layers) and cost rather than speed. In the industry people are very careful with new Non-volatile memories, because the failures may have long (delayed) failure modes that cause horrible problems and liability.
I'm fairly positive on these two choices (Re&M-RAM) mostly because people have learned to be fairly sceptical and require a lot of testing and they are porting to mulitiple Fabs. Even with the license it will be at least 12 months before there could be customer samples from the first licensee, Microsemi.
I'm fairly positive on these two choices (Re&M-RAM) mostly because people have learned to be fairly sceptical and require a lot of testing and they are porting to mulitiple Fabs. Even with the license it will be at least 12 months before there could be customer samples from the first licensee, Microsemi.